MRF6S9060MR1

Overview

The MRF6S9060MR1 is an N-Channel Enhancement-Mode Lateral MOSFET designed for broadband commercial and industrial applications up to 1000 MHz. It operates at a drain-source voltage of 68 Vdc and supports junction temperatures up to 225°C. The device delivers 60 Watts CW output power with 20 dB gain and 63% efficiency in GSM bands (921-960 MHz). In single-carrier N-CDMA at 880 MHz, it provides 14 Watts average output with 21.4 dB gain and 32.1% efficiency.

Feature Summary

• Broadband RF performance suitable for large-signal common-source amplifier applications in 28-volt base station equipment.
• Integrated ESD protection compliant with Human Body Model Class 1A and Machine Model Class A standards.
• Characterized with series equivalent large-signal impedance parameters for precise circuit design.
• Capable of handling high voltage standing wave ratios (VSWR) under continuous wave conditions.

Applications

• Single-carrier N-CDMA base station amplifiers
• GSM EDGE signal processing
• Standard GSM cellular infrastructure

Procurement Notes

Verify the specific suffix configuration against the datasheet to ensure correct packaging and termination specifications. Confirm RoHS compliance status as indicated by the 'N' suffix. Check current manufacturing availability, as related variants may have undergone obsolescence or migration notifications. Validate that the procurement channel sources directly from authorized distributors to guarantee component authenticity and traceability.

Selection Notes

Select this component for designs requiring high thermal stability and broadband operation within the 850 to 960 MHz range. Ensure the application utilizes a 28-volt supply rail to match the specified operating conditions. Verify that the system can accommodate the required gate threshold voltage and quiescent current levels. Consider the TO-270 or TO-272 package options based on available board space and mounting constraints.

Part Context

This lateral N-channel MOSFET belongs to the Freescale Semiconductor RF power transistor family, now part of NXP Semiconductors. It is engineered specifically for demanding wireless communication infrastructure where linearity and power density are critical. The device represents a mature technology platform optimized for cost-effective deployment in cellular base stations.

Replacement Considerations

Refer to Device Migration notification PCN12895 regarding the transition from MRF6S9060NR1 to MRFE6S9060NR1. The MRF6S9060NBR1 variant is no longer manufactured. Consult official documentation for pinout compatibility and electrical equivalence before substituting.