MRF6S9125NBR1

Overview

The MRF6S9125NBR1 is an N-channel enhancement-mode lateral MOSFET RF power transistor manufactured by Freescale Semiconductor. It operates within the frequency range of 824 to 894 MHz and is rated for a continuous wave output power of 25 watts at a drain voltage of 28 volts. The device utilizes a TO-270 surface-mount package, designated as CASE 1486-03, which facilitates thermal dissipation through a source-connected metal tab. This component is engineered specifically for cellular base station applications requiring high linearity and efficiency in multi-carrier environments.

Feature Summary

• Lateral N-channel enhancement-mode MOSFET technology optimized for RF power amplification
• Designed for high linearity performance in multi-carrier CDMA and TDMA base station architectures
• Robust thermal management via a source-connected exposed pad in a surface-mount package

Applications

• CDMA cellular base station power amplifiers
• TDMA radio frequency power amplification
• Multi-carrier amplifier stages for wireless infrastructure

Procurement Notes

Verify the specific suffix 'BR1' against official documentation to confirm tape-and-reel packaging specifications. Ensure the manufacturer designation aligns with current NXP ownership following the acquisition of Freescale assets. Cross-reference the CASE 1486-03 package outline with mechanical drawings to guarantee compatibility with existing PCB footprints and thermal vias before finalizing procurement orders.

Selection Notes

Select this component for designs operating between 824 and 894 MHz where 25W output power is required. The 28V drain voltage rating suits standard cellular infrastructure power supplies. Consider the TO-270 package constraints for thermal design and ensure the application supports Class AB biasing typical for linear RF power amplification requirements in base station transmitters.

Part Context

This part belongs to the MRF6S series of lateral MOSFETs developed for commercial wireless communications. The series targets the PCS and cellular bands, providing a balance of power density and linearity. As a legacy Freescale product now under NXP, it represents established technology for 2G and 3G network infrastructure deployments requiring reliable RF power generation.

Replacement Considerations

Consult official substitution guides for equivalent lateral MOSFETs within the same power class and frequency band. Verify pinout compatibility and thermal resistance characteristics when considering alternative packages or updated generations from the manufacturer.