MRF6S9130HSR3

Overview

The MRF6S9130HSR3 is an N-channel enhancement-mode lateral MOSFET designed for RF power applications. Manufactured by Freescale Semiconductor, this component utilizes silicon technology and operates in the S-band frequency range. It features a robust NI-880S package with a flange mount configuration, suitable for high-power density requirements. The device is RoHS compliant and classified under ECCN code EAR99. It functions as a single-element transistor with source-connected casing, supporting high-temperature operation up to 225 °C.

Feature Summary

• Enhancement-mode lateral MOSFET architecture for RF power amplification
• Flange mount NI-880S ceramic metal-sealed cofired package
• High thermal stability supporting operation up to 225 °C

Applications

• S-band RF power amplification systems
• Military and aerospace communication transmitters
• Base station RF front-end modules

Procurement Notes

Verify the manufacturer origin, as production may have transitioned from Freescale to NXP. Confirm the specific suffix HR3 matches the required reel packaging and RoHS compliance status. Ensure the NI-880S package variant aligns with your thermal management design constraints before finalizing procurement orders.

Selection Notes

Select this component for S-band applications requiring high power output in a ruggedized ceramic package. Consider the 65 V minimum drain-source breakdown voltage and the specific thermal resistance of the NI-880S case when designing heat sinks. Verify compatibility with existing gate drive circuits for enhancement-mode operation.

Part Context

This part belongs to the MRF6S family of RF power lateral MOSFETs from Freescale Semiconductor. These devices are engineered for demanding wireless infrastructure and defense electronics. The MRF6S series typically offers high gain and efficiency in the UHF and S-band ranges, utilizing advanced lateral DMOS processes for reliability.

Replacement Considerations

Publicly confirmed substitute part numbers for MRF6S9130HSR3 were not identified in the provided documentation.