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Product Detailed Parameters
- Description：RF MOSFET LDMOS 50V NI780
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR)
- Technology：LDMOS
- Frequency：1.09GHz
- Gain：21dB
- Voltage - Test：50 V
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：250 mA
- Power - Output：250W
- Voltage - Rated：100 V
- Grade：-
- Qualification：-
- Mounting Type：Chassis Mount
- Package / Case：NI-780S
- Supplier Device Package：NI-780S
- Configuration：-
Download product information
Overview
The MRF6V10250HSR3 is an N-Channel Enhancement-Mode Lateral MOSFET RF power transistor designed for pulsed applications operating between 1030 and 1090 MHz. It delivers a peak output power of 250 Watts with a typical drain efficiency of 60% at VDD = 50 Volts, IDQ = 250 mA, and f = 1090 MHz. The device features internal input and output matching, operates up to 50 Vdc, and includes integrated ESD protection. It is supplied in tape and reel packaging.
Feature Summary
- Internally matched for ease of use
- Integrated ESD protection
- Qualified for maximum 50 Vdd operation
Applications
- Pulsed radar systems
- Electronic warfare equipment
- Communications transmitters
Procurement Notes
Verify the specific ordering suffix R3 confirms the 250-unit tape and reel quantity per the 56 mm, 13 inch reel specification. Confirm that the component meets RoHS compliance requirements. Ensure the design accommodates the specified thermal characteristics and junction temperature limits during operation.
Selection Notes
Select this component for high-power pulsed RF applications requiring operation within the 1030 to 1090 MHz frequency range. Consider its internal matching capabilities to simplify circuit design. Evaluate thermal management strategies to maintain junction temperatures within safe operating limits for optimal reliability.
Part Context
This part belongs to the Freescale Semiconductor (now NXP) RF Power Field Effect Transistor family. It is specifically engineered for demanding pulsed RF environments where high peak power and efficiency are critical. The device utilizes lateral MOSFET technology optimized for robust performance under pulsed conditions.
Replacement Considerations
No verified public substitute part numbers are available in the provided documentation.
FAQ
What is the typical power gain of the MRF6V10250HSR3?
The typical power gain is 21 dB under standard test conditions.
Is the MRF6V10250HSR3 suitable for continuous wave operation?
No, it is designed for pulsed applications with duty cycles typically ranging from 1% to 20%.
What package style does the MRF6V10250HSR3 use?
It uses Case 465A-06, Style 1, with NI-780S configuration.
