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The MRF6V12250HR3 is a pulsed lateral N-channel RF power MOSFET manufactured by NXP Semiconductors. It operates within the frequency range of 960 MHz to 1.215 GHz. The device delivers an output power of 275 W with a gain of 20.3 dB at a drain voltage of 50 V. Key electrical specifications include a drain-source breakdown voltage of 100 V, a maximum operating temperature of +150°C, and a gate-source threshold voltage of 2.4 V. The component utilizes the NI-780 package and supports screw mounting.
Verify the specific suffix (R3) against official NXP documentation to confirm reel packaging details. Confirm current lifecycle status as sources indicate potential end-of-life or obsolescence. Ensure compatibility with NI-780 mounting hardware. Validate RoHS compliance certificates if required for specific regulatory environments. Cross-reference datasheet revisions to ensure parameter accuracy.
Select this component for applications requiring high pulsed power in the 960-1215 MHz band. Consider the 100 V breakdown voltage for system headroom. Evaluate the NI-780 package constraints for mechanical integration. Assess thermal management requirements given the 150°C maximum junction temperature limit. Compare gain and efficiency metrics against alternative LDMOS devices for the specific frequency band.
This part belongs to the MRF6V12250H series of RF power transistors from NXP. Variants such as MRF6V12250HR5 and MRF6V12250HSR3 exist, often differing in packaging or tape-and-reel specifications. The series is designed for high-power RF amplification in defense and aerospace sectors.
Publicly confirmed substitute part numbers are not available in the provided source material. Verify availability of direct replacements through NXP authorized distributors.