MRF6V12500HR3

Overview

The MRF6V12500HR3 is a 50 V RF power LDMOS transistor designed for pulse applications operating between 960 and 1215 MHz. It delivers 500 W peak output power at 1030 MHz with 19.7 dB gain and 62% drain efficiency under narrowband short pulse conditions (128 μsec, 10% duty cycle). The device supports Mode S ELM pulse configurations and maintains performance across the full broadband range of 960–1215 MHz. It features internal matching on both input and output ports to simplify circuit integration.

Feature Summary

• Internally matched for ease of use
• Integrated ESD protection
• Greater negative gate-source voltage range for improved Class C operation

Applications

• Distance measuring equipment (DME)
• Transponders
• Secondary radars for air traffic control
• Mode S ELM pulse applications

Procurement Notes

Verify the specific ordering suffix against current NXP documentation to confirm package type and reel specifications. Confirm availability status as manufacturing changes may occur. Ensure compliance with export control regulations applicable to this component. Validate that the selected variant matches the required thermal and electrical characteristics for the intended design.

Selection Notes

Select based on the requirement for high peak power in the 960-1215 MHz band. Consider the internal matching which simplifies impedance networks. Evaluate thermal management requirements given the junction-to-case thermal impedance. Verify compatibility with the specified 50 V supply and pulse duty cycles for the target application environment.

Part Context

This part belongs to the MRF6V12500H family of RF power LDMOS transistors from NXP Semiconductors. The family includes variants such as MRF6V12500HR5 and MRF6V12500HSR5, distinguished primarily by packaging and tape-and-reel configurations. These devices are engineered for demanding RF applications requiring robust performance in pulsed modes.

Replacement Considerations

MRF6V12500HR5

FAQ

What is the maximum drain-source voltage rating?

The maximum drain-source voltage (VDSS) is rated at -0.5 Vdc to +110 Vdc.

Does the device support broadband operation?

Yes, it provides typical broadband performance across the 960–1215 MHz frequency range with 500 W peak output power.

How is the device protected against electrostatic discharge?

It features integrated ESD protection that passes 2600 V via Human Body Model, 200 V via Machine Model, and 2000 V via Charge Device Model.