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The MRF6V12500HR5 is a 50 V RF power LDMOS transistor designed for pulse applications operating between 960 and 1215 MHz. It delivers 500 W peak output power at 1030 MHz with 62% drain efficiency. The device features internal matching, integrated ESD protection, and qualified operation up to 50 VDD. It utilizes the NI-780H-2L package.
Verify the specific ordering suffix against current NXP documentation to confirm tape and reel specifications. Confirm that the component meets RoHS compliance requirements for your intended manufacturing process. Ensure the selected package variant aligns with your thermal management strategy and PCB layout constraints before finalizing procurement.
Select this component for high-power pulsed radar systems requiring broad frequency coverage within the L-band. Evaluate thermal impedance characteristics against your system's cooling capabilities. Consider the internal matching benefits when designing narrowband versus broadband amplifier stages to optimize gain and efficiency performance.
This part belongs to the MRF6V12500H family of RF power LDMOS transistors manufactured by NXP Semiconductors. The HR5 suffix specifically denotes the NI-780H-2L package configuration supplied in a standard tape and reel format. This family targets demanding air traffic control and navigation applications requiring robust RF performance.
Consult official NXP documentation for verified substitute part numbers. Do not assume functional equivalence with other series without validating electrical parameters and pin configurations.