MRF6V13250HR3

Overview

The MRF6V13250HR3 is a lateral N-channel RF power MOSFET manufactured by NXP USA Inc. It operates within the 880 MHz to 960 MHz frequency range and delivers an output power of 130 W at a drain voltage of 50 V. The device utilizes LDMOS technology and features a gain of 17 dB. It is housed in the NI-780S surface-mount package with a rated voltage of 68 V and a test current of 1.4 A.

Feature Summary

• High-power RF performance utilizing LDMOS technology for efficient amplification
• Broadband operation capability across the 880 MHz to 960 MHz spectrum
• Surface-mount construction designed for automated assembly processes

Applications

• Base station transmitter modules
• Wireless communication infrastructure equipment
• Broadband RF power amplification systems

Procurement Notes

Verify component authenticity through authorized distribution channels due to potential availability constraints. Confirm RoHS compliance status and environmental declarations prior to integration. Ensure storage conditions adhere to moisture sensitivity level requirements specified in the datasheet to maintain device reliability during soldering processes.

Selection Notes

Select this component for applications requiring high linearity and efficiency in the 880-960 MHz band. Evaluate thermal management solutions compatible with the NI-780S package footprint. Compare electrical characteristics against alternative devices in the MRF6V series to ensure optimal system performance and impedance matching requirements are met.

Part Context

This part belongs to the MRF6V series of broadband RF power MOSFETs from NXP Semiconductors. These devices are engineered for demanding wireless infrastructure applications, offering robust performance in high-frequency environments. The series provides scalable power options for base station designers seeking reliable semiconductor solutions.

Replacement Considerations

Consult official substitution guides for equivalent parts within the MRF6V family. Verify pinout compatibility and thermal resistance specifications before replacing existing components in established designs.