MRF6V13250HR5

Overview

The MRF6V13250HR5 is an N-channel enhancement-mode lateral MOSFET from the VHV6 series, manufactured by Freescale Semiconductor (NXP). Designed for high-power RF applications, this silicon device operates at a drain-source voltage of 50V and delivers 250W of output power. It utilizes the NI780H surface-mount package to facilitate thermal management in demanding environments.

Feature Summary

• Enhancement-mode lateral MOSFET architecture optimized for RF power amplification
• High breakdown voltage capability suitable for robust RF circuit operation
• Halogen-free and RoHS compliant construction for environmental safety

Applications

• Commercial broadband RF power amplification
• Industrial broadcast transmitter stages
• High-power RF signal generation systems

Procurement Notes

Verify the specific suffix designation against official NXP documentation to confirm package type and compliance status. Confirm current production lifecycle status as older revisions may be obsolete. Ensure compatibility with existing NI780H footprints during integration planning.

Selection Notes

Select this component for applications requiring 250W output at 50V bias within the L-band or similar frequency ranges. Compare electrical characteristics against newer VHV6 variants if higher efficiency or different packaging is required. Validate thermal design requirements for the NI780H package.

Part Context

This part belongs to the MRF6V family of RF power transistors. It shares architectural similarities with the MRF6V12250H but differs in specific performance metrics and package variations such as R3 or SR5 suffixes. The VHV6 series represents a lineage of high-voltage lateral DMOS devices.

Replacement Considerations

Official substitutes include MRF6V12250HR3 and MRF6V12250HR5. Verify pinout compatibility and thermal resistance specifications before substitution.