MRF6V13250HSR5

Overview

The MRF6V13250HSR5 is an LDMOS RF power transistor manufactured by NXP USA Inc. It operates at a frequency of 1.3 GHz with a gain of 22.7 dB. The device provides 250 W of output power under test conditions of 50 V and 100 mA drain current. It utilizes the NI-780S package for base mounting and has a rated voltage of 120 V. The component is RoHS compliant, classified as EAR99, and holds Moisture Sensitivity Level 3.

Feature Summary

• High-power LDMOS technology optimized for RF applications
• Capable of delivering 250 W output power at 1.3 GHz
• Designed for robust performance in demanding wireless infrastructure

Applications

• Base station transmitters
• Wireless communication infrastructure
• RF power amplification systems

Procurement Notes

This component is officially listed as obsolete and end-of-life by the manufacturer. Availability is restricted to remaining stock or secondary markets. Verify authenticity through authorized channels due to discontinuation status. Ensure compliance with export control classifications (EAR99) and environmental standards (RoHS3). Lead times are not applicable for new production orders.

Selection Notes

Select this part for high-power 1.3 GHz applications requiring 250 W output. Consider the NI-780S package constraints for thermal management and mechanical integration. Evaluate alternative components if continuous supply chain stability is required, as this specific model is discontinued. Confirm compatibility with existing biasing and impedance matching networks designed for 50 V operation.

Part Context

The MRF6V13250HSR5 belongs to the MRF6 series of LDMOS transistors from NXP. This series targets high-performance RF applications in wireless communications. The specific model represents a high-power variant within the family, distinguished by its 250 W capability and 1.3 GHz operating frequency, utilizing advanced packaging for efficient heat dissipation.

Replacement Considerations

Public confirmed substitute part numbers: None identified.