MRF6V14300HR3

Overview

The MRF6V14300HR3 is an N-channel enhancement-mode lateral MOSFET designed for pulsed RF applications operating between 1200 and 1400 MHz. It delivers a peak output power of 330 Watts with a drain efficiency of 60.5% at 1400 MHz under 50 Vdc supply conditions. The device features internal matching, integrated ESD protection, and RoHS compliance. It operates within a junction temperature range up to 225 °C and withstands a 5:1 VSWR load mismatch.

Feature Summary

• Internally matched input and output networks for simplified circuit integration
• Integrated electrostatic discharge (ESD) protection mechanisms
• Enhanced negative gate-source voltage tolerance for improved Class C operation

Applications

• Pulsed radar systems
• Electronic warfare equipment
• Broadband communication transmitters

Procurement Notes

Verify the specific ordering suffix against current manufacturer documentation to confirm packaging details. Confirm component authenticity through authorized distribution channels. Ensure thermal management solutions align with the specified maximum junction temperature ratings. Validate that the application environment supports the required duty cycle and pulse width parameters defined in the official datasheet.

Selection Notes

Select this component for high-power pulsed RF designs requiring broadband performance from 1200 to 1400 MHz. Consider the internal matching capabilities to reduce external component count. Evaluate thermal resistance characteristics relative to the expected average power dissipation. Verify compatibility with the required 50 Vdc operating voltage and gate drive specifications.

Part Context

This part belongs to the MRF6V series of lateral N-channel RF power MOSFETs manufactured by Freescale Semiconductor. These devices are engineered for demanding RF environments where high peak power and reliability are critical. The series utilizes advanced semiconductor processes to achieve high gain and efficiency in compact packages suitable for modern electronic systems.

Replacement Considerations

Consult official manufacturer substitution lists for verified alternatives. Cross-reference electrical parameters such as breakdown voltage, capacitance, and thermal resistance before implementation.

FAQ

What is the maximum junction temperature rating?

The maximum operating junction temperature is rated at 225 °C.

Does the device support continuous wave operation?

No, the device is characterized and suitable for use in pulsed applications only.

How does the R3 suffix affect the package?

The R3 suffix indicates the device is supplied in tape and reel format, specifically 250 units per 56 mm, 13 inch reel.