MRF6V14300HSR3

MRF6V14300HSR3

  • Description:RF MOSFET LDMOS 50V NI780
  • Series:-

SKU:241f3649b865 Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 50V NI780
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:1.4GHz
  • Gain:18dB
  • Voltage - Test:50 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:150 mA
  • Power - Output:330W
  • Voltage - Rated:100 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:NI-780S
  • Supplier Device Package:NI-780S
  • Configuration:-

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MRF6V14300HSR3

Overview

The MRF6V14300HSR3 is a pulsed lateral N-channel RF power MOSFET designed for operation between 1200 and 1400 MHz. It delivers 330 Watts peak output power at 1400 MHz with a 50 Vdc drain supply and 150 mA quiescent current. The device achieves a typical power gain of 18 dB and a drain efficiency of 60.5% under specified pulsed conditions (300 μsec pulse width, 12% duty cycle). It features internal input and output matching, integrated ESD protection, and RoHS compliance.

Feature Summary

  • Internally matched on both input and output ports to simplify circuit design
  • Integrated electrostatic discharge (ESD) protection mechanisms
  • Qualified for maximum 50 Vdc drain-source voltage operation
  • Enhanced negative gate-source voltage range supporting improved Class C operation

Applications

  • Pulsed radar systems operating in the 1200-1400 MHz band
  • Electronic warfare equipment requiring high peak power
  • Military communication transmitters utilizing pulsed modulation

Procurement Notes

Verify component authenticity through authorized channels due to potential counterfeit risks. Confirm datasheet revision status as specifications may evolve. Ensure thermal management aligns with junction temperature limits during pulsed operation. Validate package compatibility with NI-780S mounting requirements before integration into final assemblies.

Selection Notes

Select this component for applications demanding high peak power within the 1200-1400 MHz frequency range. Consider its pulsed nature when designing bias networks and thermal solutions. Evaluate impedance matching requirements against the provided series equivalent large-signal impedance parameters. Assess system duty cycles to ensure safe operating area compliance under worst-case thermal conditions.

Part Context

This part belongs to the MRF6V14300H family of lateral N-channel enhancement-mode MOSFETs manufactured by Freescale Semiconductor. It shares architectural similarities with other devices in the series but is specifically characterized for pulsed performance metrics. The SR3 suffix indicates tape and reel packaging containing 250 units per 56 mm reel.

Replacement Considerations

MRF6V14300HR3 serves as a direct alternative differing only in packaging format.

FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is 225 °C.

Does the device require external matching networks?

No, the device is internally matched on both input and output ports.

What is the typical power gain at 1400 MHz?

The typical power gain is 18 dB under standard pulsed test conditions.

MRF6V14300HSR3MRF6V14300HSR3

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