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The MRF6V14300HSR3 is a pulsed lateral N-channel RF power MOSFET designed for operation between 1200 and 1400 MHz. It delivers 330 Watts peak output power at 1400 MHz with a 50 Vdc drain supply and 150 mA quiescent current. The device achieves a typical power gain of 18 dB and a drain efficiency of 60.5% under specified pulsed conditions (300 μsec pulse width, 12% duty cycle). It features internal input and output matching, integrated ESD protection, and RoHS compliance.
Verify component authenticity through authorized channels due to potential counterfeit risks. Confirm datasheet revision status as specifications may evolve. Ensure thermal management aligns with junction temperature limits during pulsed operation. Validate package compatibility with NI-780S mounting requirements before integration into final assemblies.
Select this component for applications demanding high peak power within the 1200-1400 MHz frequency range. Consider its pulsed nature when designing bias networks and thermal solutions. Evaluate impedance matching requirements against the provided series equivalent large-signal impedance parameters. Assess system duty cycles to ensure safe operating area compliance under worst-case thermal conditions.
This part belongs to the MRF6V14300H family of lateral N-channel enhancement-mode MOSFETs manufactured by Freescale Semiconductor. It shares architectural similarities with other devices in the series but is specifically characterized for pulsed performance metrics. The SR3 suffix indicates tape and reel packaging containing 250 units per 56 mm reel.
MRF6V14300HR3 serves as a direct alternative differing only in packaging format.
The maximum operating junction temperature is 225 °C.
No, the device is internally matched on both input and output ports.
The typical power gain is 18 dB under standard pulsed test conditions.