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Product Detailed Parameters
- Description：RF MOSFET LDMOS 50V TO272-2
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：LDMOS
- Frequency：220MHz
- Gain：23.9dB
- Voltage - Test：50 V
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：30 mA
- Power - Output：10W
- Voltage - Rated：110 V
- Grade：-
- Qualification：-
- Mounting Type：Chassis Mount
- Package / Case：TO-272BC
- Supplier Device Package：TO-272-2
- Configuration：-
Download product information
Overview
The MRF6V2010NBR5 is an NXP Semiconductors RF power lateral N-channel enhancement-mode MOSFET designed for broadband applications up to 450 MHz. It operates with a drain-source voltage of 110 V and delivers 10 W continuous wave output power at 220 MHz. The device features a TO-272-2 plastic package, supports a maximum junction temperature of 225°C, and includes integrated ESD protection.
Feature Summary
- Broadband operation capability across the 10-450 MHz frequency range
- Integrated electrostatic discharge (ESD) protection mechanisms
- High thermal tolerance with a 225°C capable plastic package
Applications
- Industrial, Scientific, and Medical (ISM) equipment
- Continuous wave large-signal output amplification
- RF driver stages in communication systems
Procurement Notes
Verify the specific suffix BR5 against official documentation to confirm the tape and reel packaging configuration. Ensure compatibility with the TO-272-2 package dimensions during board layout. Confirm that the ordering information matches the required quantity per reel as specified in the manufacturer's data sheet.
Selection Notes
Select this component for designs requiring high reliability under harsh conditions due to its robust thermal characteristics. The integrated ESD protection simplifies handling requirements. Consider the 225°C junction temperature limit when calculating thermal management solutions for high-power density environments.
Part Context
This part belongs to the MRF6V2010N family of RF power LDMOS transistors. Variants include MRF6V2010N and MRF6V2010GN, which differ primarily in package type. The family is engineered for unmatched broadband performance in demanding RF applications.
Replacement Considerations
MRF6V2010N
FAQ
What is the maximum operating junction temperature?
The maximum operating junction temperature is 225°C.
Does the device include ESD protection?
Yes, the device features integrated ESD protection characterized according to Human Body Model, Machine Model, and Charge Device Model standards.
What is the recommended mounting method?
Special considerations must be followed for board design and mounting. Refer to Application Note AN3263 for bolt-down mounting or AN1907 for solder reflow mounting.
