MRF6V2300NBR1

MRF6V2300NBR1

$113.32
  • Description:RF MOSFET LDMOS 50V TO272-4
  • Series:-

SKU:7132e7e97d91 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 50V TO272-4
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:LDMOS
  • Frequency:220MHz
  • Gain:25.5dB
  • Voltage - Test:50 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:900 mA
  • Power - Output:300W
  • Voltage - Rated:110 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:TO-272BB
  • Supplier Device Package:TO-272 WB-4
  • Configuration:-

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MRF6V2300NBR1

Overview

The MRF6V2300NBR1 is an N-Channel Enhancement-Mode Lateral MOSFET designed for CW large-signal output and driver applications up to 600 MHz. It operates at a maximum drain-source voltage of 110 Vdc with a junction temperature capability of 225°C. Typical performance at 220 MHz, 50 Vdc, and 900 mA quiescent current yields 300 Watts output power, 25.5 dB power gain, and 68% drain efficiency. The device handles 10:1 VSWR and features integrated ESD protection.

Feature Summary

  • Broadband operation across the 10–600 MHz frequency range
  • High thermal stability with a 225°C capable plastic package
  • Integrated electrostatic discharge (ESD) protection
  • Characterized using series equivalent large-signal impedance parameters

Applications

  • Industrial, medical, and scientific (IMS) equipment
  • Broadcast amplifier stages
  • CW large-signal output amplifiers
  • Driver stages in RF transmission systems

Procurement Notes

Verify the specific ordering suffix against the manufacturer's documentation to confirm the correct package style. The R1 suffix indicates tape and reel packaging containing 500 units on a 44 mm reel. Confirm that the component matches the intended application requirements regarding thermal management and mounting methodology before procurement.

Selection Notes

Select this component for designs requiring high power density and broad bandwidth without external matching networks. Ensure the system design accommodates the 225°C junction temperature limit and utilizes appropriate mounting techniques as detailed in application notes AN3263 or AN1907. Validate input and output impedances for the specific operating frequency to optimize gain and efficiency.

Part Context

This part belongs to the MRF6V2300N family of RF Power LDMOS transistors manufactured by Freescale Semiconductor. The family includes variants such as MRF6V2300NR1 and MRF6V2300NBR5, which share similar electrical characteristics but differ in packaging and delivery formats. These devices are engineered for commercial and industrial broadband applications.

Replacement Considerations

MRF6V2300NR1 and MRF6V2300NBR5 are confirmed substitutes within the same product family.

MRF6V2300NBR1MRF6V2300NBR1
$113.32
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