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The MRF6V2300NBR1 is an N-Channel Enhancement-Mode Lateral MOSFET designed for CW large-signal output and driver applications up to 600 MHz. It operates at a maximum drain-source voltage of 110 Vdc with a junction temperature capability of 225°C. Typical performance at 220 MHz, 50 Vdc, and 900 mA quiescent current yields 300 Watts output power, 25.5 dB power gain, and 68% drain efficiency. The device handles 10:1 VSWR and features integrated ESD protection.
Verify the specific ordering suffix against the manufacturer's documentation to confirm the correct package style. The R1 suffix indicates tape and reel packaging containing 500 units on a 44 mm reel. Confirm that the component matches the intended application requirements regarding thermal management and mounting methodology before procurement.
Select this component for designs requiring high power density and broad bandwidth without external matching networks. Ensure the system design accommodates the 225°C junction temperature limit and utilizes appropriate mounting techniques as detailed in application notes AN3263 or AN1907. Validate input and output impedances for the specific operating frequency to optimize gain and efficiency.
This part belongs to the MRF6V2300N family of RF Power LDMOS transistors manufactured by Freescale Semiconductor. The family includes variants such as MRF6V2300NR1 and MRF6V2300NBR5, which share similar electrical characteristics but differ in packaging and delivery formats. These devices are engineered for commercial and industrial broadband applications.
MRF6V2300NR1 and MRF6V2300NBR5 are confirmed substitutes within the same product family.