MRF6V2300NR1

MRF6V2300NR1

$76.14
  • Description:RF MOSFET LDMOS 50V TO270-4
  • Series:-

SKU:91d462a51e87 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 50V TO270-4
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:LDMOS
  • Frequency:220MHz
  • Gain:25.5dB
  • Voltage - Test:50 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:900 mA
  • Power - Output:300W
  • Voltage - Rated:110 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-270AB
  • Supplier Device Package:TO-270 WB-4
  • Configuration:-

Download product information

MRF6V2300NR1

Overview

The MRF6V2300NR1 is a 10-600 MHz, 300 W CW, 50 V Lateral N-Channel Single-Ended Broadband RF Power MOSFET. Designed for unmatched driver and large-signal output applications in industrial, medical, and scientific fields, it operates with a maximum drain-source voltage of 110 Vdc and an operating junction temperature up to 225°C. At 220 MHz with 50 Vdc supply and 900 mA quiescent current, typical performance includes 300 Watts output power, 25.5 dB power gain, and 68% drain efficiency.

Feature Summary

  • Broadband operation across the 10-600 MHz frequency range
  • High thermal capability with a 225°C capable plastic package
  • Integrated electrostatic discharge (ESD) protection
  • Characterized using series equivalent large-signal impedance parameters

Applications

  • Industrial, Medical, and Scientific (IMS) equipment
  • Unmatched RF driver stages
  • Large-signal output amplifier applications

Procurement Notes

Verify component authenticity through authorized channels. Confirm RoHS compliance status and check for specific environmental declarations such as REACH SVHC. Ensure proper handling procedures are followed due to high-power characteristics. Review application notes AN1907 and AN3263 for correct mounting methodologies prior to system integration.

Selection Notes

Select this device for broadband requirements spanning 10 to 600 MHz where single-ended topology is preferred. It is suitable for designs requiring up to 300 Watts continuous wave output at 50 Volts. Designers must account for the 225°C junction temperature limit and utilize appropriate thermal management strategies to maintain reliability under maximum load conditions.

Part Context

Originally manufactured by Freescale Semiconductor, this part belongs to the family of lateral N-channel enhancement-mode MOSFETs designed for RF power amplification. The device utilizes a TO-270WB-4 plastic package configuration. It serves as a robust solution for wideband transmitter systems requiring high linearity and power density without complex matching networks.

Replacement Considerations

MRF6V2300NBR1

MRF6V2300NR1MRF6V2300NR1
$76.14
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