MRF6V3090NR1

MRF6V3090NR1

$60.36
  • Description:RF MOSFET LDMOS 50V TO270-4
  • Series:-

SKU:a53ec433569c Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 50V TO270-4
  • Series:-
  • Mfr:Freescale Semiconductor
  • Package:Bulk
  • Technology:LDMOS
  • Frequency:860MHz
  • Gain:22dB
  • Voltage - Test:50 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:350 mA
  • Power - Output:18W
  • Voltage - Rated:110 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-270AB
  • Supplier Device Package:TO-270 WB-4
  • Configuration:-

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MRF6V3090NR1

Overview

The MRF6V3090NR1 is an N-Channel Enhancement-Mode Lateral MOSFET designed for RF power amplifier applications. It operates within the FM broadcast band of 88 to 108 MHz. The device is housed in a low-cost overmolded plastic package, facilitating compact and reliable circuit designs. It supports broadband operation without requiring tuning, making it suitable for FCC Class A stations with specific coverage requirements.

Feature Summary

  • N-Channel Enhancement-Mode Lateral MOSFET technology
  • Broadband operation across the 88 to 108 MHz FM broadcast band
  • Low-cost overmolded plastic packaging for compact design
  • No tuning required for broadband performance

Applications

  • Single-ended RF power amplifiers for FM broadcast bands
  • Small to medium radio station transmitters
  • FCC Class A broadcast applications
  • Broadband power amplifier designs requiring simplicity and reliability

Procurement Notes

Verify the exact part number suffix against official NXP or Freescale documentation to confirm package type and reel specifications. Ensure compatibility with existing thermal management solutions, as the overmolded plastic package requires appropriate heat sinking for sustained high-power operation in broadcast environments.

Selection Notes

Select this component for FM broadcast applications where broadband performance eliminates the need for complex tuning circuits. Consider the trade-off between the cost-effectiveness of the plastic package and thermal dissipation needs compared to ceramic alternatives for high-duty cycle operations.

Part Context

This device belongs to the MRF6VXXXXN family of RF power LDMOS transistors from Freescale Semiconductor (now NXP). These components are engineered specifically for commercial and industrial broadband applications, offering a balance of performance and cost-efficiency for radio frequency power amplification tasks.

Replacement Considerations

MRF6V3090NBR1

FAQ

Is the MRF6V3090NR1 suitable for tuned amplifier designs?

While primarily designed for broadband applications that require no tuning, it can be used in tuned circuits if the design parameters align with its electrical characteristics.

What is the primary advantage of the overmolded plastic package?

The overmolded plastic package provides a low-cost solution that allows for compact and flexible amplifier designs while maintaining reliability for broadcast applications.

MRF6V3090NR1MRF6V3090NR1
$60.36
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