MRF6V4300NBR5

Overview

The MRF6V4300NBR5 is an RF Power LDMOS Transistor manufactured by Freescale Semiconductor. It is an enhancement-mode lateral MOSFET designed for commercial and industrial broadband applications with frequencies from 470 to 860 MHz. The device is suitable for use in broadcast applications. Typical performance data includes: VDD = 50 Volts, IDQ = 450 mA, 64 QAM, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. Output Power (Pout) is 18 W at 470 MHz, 650 MHz, and 860 MHz. Gain (Gps) is 21.8 dB at 470 MHz, 21.6 dB at 650 MHz, and 21.7 dB at 860 MHz. Drain Efficiency (ηD) is 31.0% at 470 MHz, 26.4% at 650 MHz, and 27.6% at 860 MHz. Output Signal PAR is 7.9 dB at 470 MHz, 8.4 dB at 650 MHz, and 7.1 dB at 860 MHz. IMD Shoulder is -27.8 dBc at 470 MHz, -37.6 dBc at 650 MHz, and -30.4 dBc at 860 MHz.

Feature Summary

• Enhancement-mode lateral MOSFET technology
• Designed for commercial and industrial broadband applications
• Suitable for broadcast applications

Applications

• Commercial broadband applications
• Industrial broadband applications
• Broadcast applications

Procurement Notes

Verify the specific part number suffix against official documentation to confirm packaging and reel specifications. Ensure compatibility with the intended frequency range and biasing conditions. Confirm RoHS compliance status as per the manufacturer's latest release notes. Cross-reference the datasheet revision date to ensure access to the most current electrical characteristics and handling guidelines.

Selection Notes

Select this component for designs requiring operation within the 470 to 860 MHz frequency band. Consider the typical performance metrics under specified bias conditions for gain and efficiency requirements. Evaluate thermal management needs based on the power dissipation characteristics. Ensure the application environment aligns with the device's suitability for commercial and industrial uses.

Part Context

This device belongs to the RF Power LDMOS Transistors family from Freescale Semiconductor. It is engineered for high-performance linear amplification in broadband scenarios. The technology leverages lateral MOSFET structures to provide robust operation in demanding RF environments.

Replacement Considerations

MRF6VP3091NR1, MRF6VP3091NR5, MRF6VP3091NBR1 are listed as related parts in the same product family document.