MRF6V4300NR1

MRF6V4300NR1

  • Description:RF MOSFET LDMOS 50V TO270-4
  • Series:-

SKU:0f034688efed Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 50V TO270-4
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:450MHz
  • Gain:22dB
  • Voltage - Test:50 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:900 mA
  • Power - Output:300W
  • Voltage - Rated:110 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-270AB
  • Supplier Device Package:TO-270 WB-4
  • Configuration:-

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MRF6V4300NR1

Overview

The MRF6V4300NR1 is a lateral N-channel single-ended broadband RF power MOSFET designed for CW large-signal output and driver applications up to 600 MHz. It operates at a maximum drain-source voltage of 50 Vdc and delivers 300 Watts of output power at 450 MHz with 22 dB gain and 60% drain efficiency. The device features an integrated ESD protection structure, qualified up to 50 Vdd operation, and utilizes a 225°C capable plastic package. It is supplied in tape and reel format.

Feature Summary

  • Broadband operational capability across the 10-600 MHz frequency range
  • Integrated electrostatic discharge (ESD) protection structure
  • Enhanced negative gate-source voltage range optimized for Class C operation
  • High thermal tolerance utilizing a 225°C capable plastic package

Applications

  • Industrial, Medical, and Scientific (IMS) equipment
  • Continuous Wave (CW) large-signal output amplification
  • RF driver stages for high-power amplifier chains

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging configuration. The R1 suffix indicates a standard tape and reel quantity of 500 units on a 44 mm, 13-inch reel. Ensure procurement channels provide original manufacturer documentation to validate component authenticity and traceability prior to integration into production systems.

Selection Notes

Select this component for designs requiring high power density within a broad frequency spectrum without complex impedance matching networks. Evaluate thermal management requirements carefully, as continuous use at maximum junction temperatures affects mean time to failure. Confirm that system biasing supports the specified quiescent current and gate threshold voltages for optimal performance.

Part Context

This part belongs to the Freescale Semiconductor RF Power Field Effect Transistors family, specifically categorized as Lateral N-Channel Enhancement-Mode MOSFETs. It serves as a high-performance solution for radio frequency power amplification, bridging the gap between driver stages and final output stages in broadband communication and industrial transmission systems.

Replacement Considerations

Consult official replacement lists for verified substitutes. Cross-referencing requires matching electrical parameters such as breakdown voltage, power handling, and frequency range.

MRF6V4300NR1MRF6V4300NR1

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