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The MRF6VP11KGSR5 is a lateral N-channel RF MOSFET transistor from the MRF6VP11KH series, manufactured by NXP Semiconductors. Designed for broadband applications up to 150 MHz, this device delivers 1000 W of output power at a 50 V supply voltage. It utilizes an NI-1230 surface-mount package and operates within a temperature range of -65°C to +150°C. The component features a drain-source breakdown voltage of 110 V and supports gate-source voltages between -6 V and +10 V.
Verify current availability status as distribution channels may indicate discontinuation or limited stock. Confirm exact suffix specifications against official datasheets to ensure compatibility with required packaging formats. Validate RoHS compliance documentation prior to procurement to meet regulatory standards for intended deployment environments.
Select this component for designs requiring high power density in the low-frequency RF spectrum. Ensure thermal management solutions accommodate the specified operating temperature limits. Verify that the application circuitry supports the required 50 V bias conditions and matches the NI-1230 footprint constraints for proper installation.
This part belongs to the MRF6VP11KH family of lateral N-channel broadband transistors. These devices are specifically optimized for industrial, medical, and scientific (IMS) applications where high power output is critical. The series provides a reliable solution for broadband amplification without the need for internal matching networks.
The MRF6VP11KHR6 is a documented related variant within the same product family offering identical electrical characteristics. Verify package and reel specifications when substituting to ensure mechanical compatibility.