MRF6VP121KHR5-FR

Overview

The MRF6VP121KHR5-FR is an enhancement-mode lateral MOSFET designed for commercial and industrial broadband applications. It operates within the frequency range of 965 to 1215 MHz. The device delivers a typical output power of 1000 W with a drain voltage of 50 V. It is suitable for use in broadcast applications requiring high power and broad bandwidth performance.

Feature Summary

• Enhancement-mode LDMOS technology
• Broadband operation capability
• High output power density

Applications

• Commercial broadcast transmitters
• Industrial broadband amplifiers
• High-power RF signal generation

Procurement Notes

Verify the specific suffix 'FR' against official NXP/Freescale documentation to confirm reel packaging specifications. Ensure the part number matches the exact electrical characteristics required for your 965-1215 MHz design. Cross-reference with the MRF6VP121KH datasheet for pinout and thermal data.

Selection Notes

Select this component for designs requiring high power in the VHF/UHF band. Consider thermal management due to high power dissipation. Verify compatibility with 50 V supply rails. Check impedance matching requirements for the specified frequency range.

Part Context

This part belongs to the MRF6VP series of RF Power LDMOS Transistors. These devices are engineered for robustness in demanding RF environments. The K suffix typically indicates a specific package variant, while H denotes enhancement mode. This family supports continuous wave and high peak power operations.

Replacement Considerations

Direct substitutes include other MRF6VP121KH variants. Verify pin compatibility and thermal resistance when replacing. Consult official cross-reference guides for equivalent parts from NXP or authorized manufacturers.