MRF6VP121KHR5

Overview

The MRF6VP121KHR5 is an RF MOSFET LDMOS transistor manufactured by NXP USA Inc. It operates at a frequency of 1.03GHz with a gain of 20dB. The device features a drain-source voltage rating of 50V and a maximum rated voltage of 110V. It delivers an output power of 1000W and is housed in the NI-1230S package.

Feature Summary

• Utilizes LDMOS technology for high-frequency RF applications
• Designed for base station infrastructure requiring high power output
• Features dual configuration within the NI-1230S package

Applications

• Base station power amplification
• Broadband RF signal generation
• Wireless communication infrastructure

Procurement Notes

Verify component authenticity through authorized channels as availability may be restricted. Confirm package integrity and datasheet alignment before integration. Check for end-of-life status or obsolescence notices from NXP to ensure long-term supply chain stability for production planning.

Selection Notes

Select this component for designs requiring 1000W output at 1.03GHz. Ensure thermal management supports the NI-1230S footprint. Verify system voltage limits do not exceed the 110V rating. Compare against similar MRF6VP series parts for frequency-specific optimization.

Part Context

Part of the MRF6VP family of RF power transistors. Designed for high-efficiency amplification in cellular base stations. Shares packaging standards with other NI-1230 series devices for board compatibility.

Replacement Considerations

MRF6VP121KH is a verified substitute part number within the same product family offering identical electrical specifications.