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The MRF6VP121KHSR5 is a dual-channel LDMOS RF power transistor manufactured by NXP USA Inc. It operates within the 965 MHz to 1215 MHz frequency range and delivers 1000 W of output power at a rated voltage of 50 V. The device utilizes an NI-1230S surface-mount package designed for base station applications. Key electrical characteristics include a drain-source breakdown voltage of 110 V, a gate-source voltage range of -6 V to +10 V, and a typical gain of 20 dB. It supports a maximum operating temperature of +150 °C.
Verify component authenticity through authorized NXP channels due to potential supply chain variations. Confirm specific suffix designations against official datasheets as packaging or reel configurations may differ between distributors. Ensure compliance with RoHS directives and material declarations prior to integration into final assemblies.
Select this component for wideband applications requiring consistent 1000 W output across the 965-1215 MHz spectrum. Evaluate thermal management requirements given the 150 °C junction limit and NI-1230S package constraints. Compare gain and linearity specifications against system-level amplifier requirements to ensure adequate performance margins.
This part belongs to the MRF6VP121KH family of wideband LDMOS transistors. It shares architectural similarities with other members like the MRF6VP11KH but is specifically tuned for higher frequency coverage up to 1215 MHz. The SR5 suffix typically denotes specific reel packaging standards used by major distributors.
Publicly confirmed direct substitute part numbers are not available in the provided documentation. Engineering teams should consult NXP technical support for validated cross-references or updated lifecycle status information.