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Product Detailed Parameters
- Description：RF MOSFET LDMOS 50V NI1230
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR)
- Technology：LDMOS
- Frequency：225MHz
- Gain：24dB
- Voltage - Test：50 V
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：150 mA
- Power - Output：1000W
- Voltage - Rated：110 V
- Grade：-
- Qualification：-
- Mounting Type：Chassis Mount
- Package / Case：NI-1230
- Supplier Device Package：NI-1230
- Configuration：Dual
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Overview
The MRF6VP21KHR6 is an N-Channel Enhancement-Mode Lateral MOSFET designed for pulsed wideband applications up to 235 MHz. It operates at a maximum drain-source voltage of 110 Vdc and supports push-pull configurations. Typical performance at 225 MHz with VDD = 50V, IDQ = 150 mA, and a 100 μsec pulse width (20% duty cycle) yields 1000 Watts peak output power (200 W average), 24 dB power gain, and 67.5% drain efficiency. The device features integrated ESD protection and RoHS compliance.
Feature Summary
- Designed primarily for pulsed wideband applications with frequencies up to 235 MHz
- Suitable for use in industrial, medical, and scientific applications
- Qualified for operation up to a maximum of 50 Vdd
- Features greater negative gate-source voltage range for improved Class C operation
Applications
- Industrial heating systems
- Medical equipment RF generators
- Scientific instrumentation
Procurement Notes
Verify the specific ordering suffix R6 confirms tape and reel packaging containing 150 units per 56 mm, 13 inch reel. Confirm the component status as active or obsolete through official NXP channels before procurement. Ensure compatibility with existing thermal management solutions given the high peak power dissipation requirements.
Selection Notes
Select this component for designs requiring high peak power output in the 10-235 MHz range. Ensure adequate cooling is provided for CW operation capabilities. Verify that the system can handle the required 10:1 VSWR tolerance at 50 Vdc. Consider the push-pull configuration requirement for optimal performance and impedance matching.
Part Context
This part belongs to the Freescale/NXP RF Power Field Effect Transistor family, specifically lateral N-channel broadband RF power MOSFETs. It utilizes Case 375D-05 packaging and is intended for high-power pulsed applications where wide bandwidth and robustness against load mismatches are critical design parameters.
Replacement Considerations
Consult official NXP documentation for direct cross-reference data. No public substitute part numbers are confirmed in the provided datasheet.
FAQ
What is the maximum operating junction temperature?
The maximum operating junction temperature is 225 °C.
Is the device internally matched?
No, the device is unmatched and requires external matching networks.
What is the typical power gain at 225 MHz?
The typical power gain is 24 dB under standard test conditions.
