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The MRF6VP3091NR5 is an enhancement-mode lateral MOSFET RF power transistor designed for commercial and industrial broadband applications. It operates within the 470 to 860 MHz frequency range and is suitable for broadcast uses. The device typically delivers 90 W of output power at a 50 V supply voltage. Key performance metrics include a power gain of approximately 21.6 dB and drain efficiency ranging from 26.4% to 31.0%. It supports signal parameters with a peak-to-average ratio of roughly 8.4 dB, maintaining intermodulation distortion shoulders below -30 dBc.
Verify the specific ordering suffix NR5 against current NXP documentation to confirm package type and reel specifications. Confirm availability status as this component series may be subject to discontinuation or lifecycle changes. Ensure compatibility with existing thermal management solutions and biasing circuits designed for 50 V operation. Cross-reference datasheet revisions to validate electrical characteristics match design requirements.
Select this component for designs requiring broad bandwidth coverage between 470 and 860 MHz without retuning. Consider the 50 V operating requirement and associated power dissipation capabilities. Evaluate the need for high linearity to support complex modulation schemes like 64 QAM. Assess thermal resistance and package constraints for integration into the target chassis or PCB layout.
This part belongs to the MRF6VP3091N family of RF power LDMOS transistors manufactured by NXP Semiconductors (formerly Freescale). These devices are engineered specifically for high-power, broadband applications where consistent performance across a wide frequency span is critical. The family targets infrastructure and broadcast markets demanding reliable RF energy conversion.
Public confirmed substitute part numbers are not available in the provided source material.