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Product Detailed Parameters
- Description：RF MOSFET LDMOS 50V NI1230
- Series：-
- Mfr：NXP Semiconductors
- Package：Bulk
- Technology：LDMOS
- Frequency：470MHz ~ 860MHz
- Gain：22.5dB
- Voltage - Test：50 V
- Current Rating (Amps)：10µA
- Noise Figure：-
- Current - Test：1.4 A
- Power - Output：450W
- Voltage - Rated：110 V
- Grade：-
- Qualification：-
- Mounting Type：Chassis Mount
- Package / Case：NI-1230
- Supplier Device Package：NI-1230
- Configuration：Dual, Common Source
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Overview
The MRF6VP3450HR5 is an N-channel enhancement-mode lateral MOSFET designed for broadband commercial and industrial applications between 470 MHz and 860 MHz. It features a drain-source breakdown voltage of 110 Vdc, gate-source voltage limits from -6.0 V to +10 V, and operates up to a junction temperature of 225 °C. The device delivers 450 W PEP in two-tone tests and 90 W average power in DVB-T OFDM configurations at 860 MHz with 50 Vdc bias.
Feature Summary
- Internally input matched for simplified circuit integration
- Qualified for maximum 50 Vdd operation
- Integrated ESD protection mechanisms
- Designed specifically for push-pull amplifier topologies
Applications
- Large-signal common-source amplifiers
- Analog television transmitter equipment
- Digital television transmitter equipment
- Broadband commercial RF applications
- Industrial RF processing systems
Procurement Notes
Verify the specific suffix HR5 against official documentation to confirm reel specifications and unit counts. Confirm RoHS compliance status through current manufacturer declarations. Ensure thermal management solutions align with the specified junction temperature ratings and thermal resistance characteristics provided in the datasheet.
Selection Notes
Select this component when designing broadband amplifiers requiring high gain across the 470-860 MHz range. Consider its suitability for push-pull configurations and verify that the internal matching network meets system impedance requirements. Evaluate thermal performance under continuous wave or pulsed conditions based on application duty cycles.
Part Context
This part belongs to the MRF6VP3450H family of lateral N-channel broadband RF power MOSFETs manufactured by Freescale Semiconductor, now NXP Semiconductors. The series targets demanding RF environments requiring robust performance in television broadcasting and industrial sectors.
Replacement Considerations
Consult official substitution lists for verified equivalents. Cross-reference pinouts and electrical parameters carefully before implementation.
FAQ
What is the operating frequency range?
The device is designed for frequencies from 470 MHz to 860 MHz.
Is the device internally matched?
Yes, the MRF6VP3450HR5 is internally input matched for ease of use.
Can it handle high VSWR?
It is capable of handling 10:1 VSWR at all phase angles at 50 Vdc and 860 MHz.
