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The MRF6VP3450HR6 is a lateral N-channel enhancement-mode RF power MOSFET designed for broadband commercial and industrial applications operating between 470 MHz and 860 MHz. It features an NI-1230 package with internal input matching and ESD protection, suitable for push-pull configurations in 50V analog or digital television transmitter equipment. Key electrical parameters include a drain-source breakdown voltage of 110 Vdc, gate-source voltage limits of -6.0 V to +10 Vdc, and a maximum junction temperature of 225°C. The device delivers 450 W PEP output power at 22 dB gain under two-tone conditions.
Verify the specific suffix R6 indicates a reel quantity of 150 units per 56 mm, 13 inch reel. Confirm RoHS compliance status through official documentation. Ensure the sourcing channel provides valid manufacturer traceability. Check for any obsolescence notices as this component originates from Freescale Semiconductor era documentation.
Select this component for broadband designs requiring high linearity and efficiency across the 470-860 MHz spectrum. Consider the thermal resistance characteristics when designing heat sinks for continuous wave operations. Verify that the system impedance matches the internal matching network requirements for optimal performance without external input matching components.
This part belongs to the MRF6VP3450H series, which includes variants like HR5, HSR6, and HSR5. These devices are lateral N-channel LDMOS transistors originally manufactured by Freescale Semiconductor. The series is characterized by large-signal impedance parameters and is optimized for high-power RF amplification in broadcast infrastructure.
Consult official datasheets for direct equivalents within the MRF6VP3450H family such as MRF6VP3450HR5 or MRF6VP3450HSR6. Verify pinout compatibility and thermal specifications before substitution. No other cross-brand replacements are confirmed in public documentation.