MRF6VP41KHSR5

Overview

The MRF6VP41KHSR5 is a dual LDMOS RF power transistor manufactured by NXP USA Inc. It operates within the 10 MHz to 500 MHz frequency range and delivers 1000 W of output power with a 50 V drain voltage rating. The device utilizes an NI-1230S package for base mounting, ensuring robust thermal performance in high-power applications.

Feature Summary

• Dual configuration LDMOS technology for balanced RF power amplification
• High power density capability delivering 1000 W output at 50 V
• Broadband operation spanning from 10 MHz up to 500 MHz
• NI-1230S base-mounted package designed for efficient heat dissipation

Applications

• Broadcast AM/FM transmitter power amplifiers
• Industrial heating and plasma generation systems
• Military communication equipment requiring high linearity

Procurement Notes

Verify current availability status as distribution channels may list this component as discontinued or end-of-life. Confirm exact suffix designations match required packaging specifications. Request official datasheets and RoHS compliance certificates directly from authorized NXP distributors to ensure authenticity and traceability before finalizing procurement orders.

Selection Notes

Select this component when designing broadband amplifiers requiring high output power in the HF/VHF bands. Ensure the cooling solution supports the thermal requirements of the NI-1230S package. Verify that the driving circuitry can handle the input impedance characteristics typical of dual LDMOS structures at frequencies up to 500 MHz.

Part Context

This part belongs to the MRF6VP series of high-power LDMOS transistors. It shares architectural similarities with other variants like the MRF6VP121KH but differs in specific frequency optimization and gain characteristics. The NI-1230S package is standard for this power class, facilitating integration into existing chassis designs used in broadcast and industrial RF applications.

Replacement Considerations

Direct substitutes include MRF6VP41KH. Evaluate pin compatibility and thermal resistance differences when considering alternative packages such as CFM4F variants.