MRF6VP41KHSR6

Description：RF MOSFET LDMOS 50V NI1230
Series：-

SKU:bd6294775ace Category: RF FETs, MOSFETs Brand: NXP USA Inc.

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Product introduction

Product Detailed Parameters

Description：RF MOSFET LDMOS 50V NI1230
Series：-
Mfr：NXP USA Inc.
Package：Tape & Reel (TR)
Technology：LDMOS
Frequency：450MHz
Gain：20dB
Voltage - Test：50 V
Current Rating (Amps)：-
Noise Figure：-
Current - Test：150 mA
Power - Output：1000W
Voltage - Rated：110 V
Grade：-
Qualification：-
Mounting Type：Chassis Mount
Package / Case：NI-1230S
Supplier Device Package：NI-1230S
Configuration：Dual

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MRF6VP41KHSR6

Overview

The MRF6VP41KHSR6 is an N-Channel Enhancement-Mode Lateral MOSFET designed for pulse and CW wideband applications up to 500 MHz. It operates at a maximum drain-source voltage of 110 Vdc with a quiescent current of 150 mA. The device delivers 1000 W peak output power (200 W average) at 450 MHz with a 20% duty cycle, or 1000 W continuous wave at 352.2 MHz. It features a typical power gain of 20 dB and drain efficiency up to 67%. Packaged in the NI-1230S format, it is qualified for push-pull operation.

Feature Summary

Designed for push-pull configurations with integrated ESD protection
Capable of handling high VSWR conditions during operation
Features a greater negative gate-source voltage range for improved Class C performance
Characterized using series equivalent large-signal impedance parameters

Applications

Industrial, medical, and scientific (IMS) applications
Pulse RF power amplification systems
Continuous wave (CW) broadband RF power amplifiers

Procurement Notes

Verify the specific suffix against official documentation to confirm packaging details. Confirm that the component meets all environmental compliance standards required for your deployment. Ensure thermal management solutions align with the specified junction-to-case thermal resistance values provided in the datasheet.

Selection Notes

Select this component for designs requiring high peak power density within the 100-500 MHz frequency range. Evaluate the thermal requirements carefully, as continuous operation demands adequate cooling to maintain junction temperatures within safe limits. Consider the push-pull topology benefits when designing matching networks for optimal efficiency.

Part Context

This part belongs to the MRF6VP41KH family of lateral N-channel broadband RF power MOSFETs manufactured by NXP USA Inc. (formerly Freescale). These devices are engineered specifically for robust performance in demanding RF environments where high linearity and power handling are critical.