MRF7S15100HR3

Overview

The MRF7S15100HR3 is an N-Channel Enhancement-Mode Lateral MOSFET designed for CDMA base station applications operating between 1470 and 1510 MHz. It delivers 23 Watts average output power at 28 Volts with a drain efficiency of 32%. The device features internal input and output matching, integrated ESD protection, and optimized performance for Doherty amplifier configurations. It supports Class AB and Class C modulation schemes.

Feature Summary

• Internally matched for ease of use
• Integrated ESD protection
• Optimized for Doherty applications

Applications

• CDMA base station amplifiers
• Class AB cellular base station modulations
• Class C cellular base station modulations

Procurement Notes

Verify the specific suffix 'R3' to confirm tape and reel packaging containing 250 units per 56 mm reel. Confirm RoHS compliance status as documented in the datasheet. Ensure the ordering part number matches the exact Freescale/NXP designation to avoid variant discrepancies.

Selection Notes

Select this component for wideband cellular infrastructure requiring high linearity and ruggedness. The device handles 10:1 VSWR under specified conditions. Verify thermal management requirements against the junction-to-case resistance values provided in the thermal characteristics table for your specific case temperature.

Part Context

This part belongs to the MRF7S series of RF power lateral MOSFETs from Freescale Semiconductor (now NXP). These devices are engineered for high-power wireless communication base stations. The MRF7S15100HR3 specifically targets the 1470-1510 MHz frequency range with optimized gain and efficiency profiles.

Replacement Considerations

MRF7S15100HSR3 is the alternative package version available within the same product family.