MRF7S18125AHSR3

Overview

The MRF7S18125AHSR3 is an N-Channel Enhancement-Mode Lateral MOSFET designed for GSM and GSM EDGE base station applications operating between 1800 MHz and 2000 MHz. It supports Class AB and Class C modulations with a drain-source voltage of 65 Vdc and an operating voltage of 32 Vdc. At 1880 MHz, it delivers 125 Watts CW output power with 17 dB gain and 55% drain efficiency at 28 Volts. The device handles 5:1 VSWR and achieves a 1 dB compression point of 140 Watts CW.

Feature Summary

• Internally matched input and output circuits to simplify RF design
• Integrated electrostatic discharge (ESD) protection mechanisms
• Characterized using series equivalent large-signal impedance parameters

Applications

• GSM base station power amplification
• GSM EDGE base station power amplification
• Class AB cellular base station modulation
• Class C cellular base station modulation

Procurement Notes

Verify the specific ordering suffix 'SR3' against official documentation to confirm tape and reel packaging specifications. Ensure the component matches the NI-780S package style required for surface mount implementation. Cross-reference the manufacturer's datasheet revision history to validate technical data accuracy before finalizing procurement orders.

Selection Notes

Select this component for high-power RF applications requiring internal matching networks to reduce external circuit complexity. Evaluate thermal resistance characteristics relative to the intended case temperature and continuous wave output power requirements. Confirm that the operating frequency range aligns with the target GSM or EDGE band specifications.

Part Context

This part belongs to the Freescale Semiconductor RF Power Field Effect Transistors family, specifically lateral N-channel devices. It is manufactured under the MRF7S series designation. The SR3 suffix indicates the reel packaging format containing 250 units per 56 mm, 13 inch reel.

Replacement Considerations

Consult official distributor databases for verified substitute part numbers. Do not assume functional equivalence based on generic specifications without validating electrical parameters against the original datasheet.

FAQ

What is the maximum junction temperature for the MRF7S18125AHSR3?

The maximum operating junction temperature is 225 °C.

How does the device handle mismatched loads?

The transistor is capable of handling a 5:1 Voltage Standing Wave Ratio (VSWR) at 28 Vdc and 1840 MHz with 125 Watts CW output power.

What are the typical ESD protection levels?

The device meets minimum Human Body Model Class 1B, Machine Model Class A, and Charge Device Model Class IV standards.