MRF7S18125BHR3

Overview

The MRF7S18125BHR3 is an N-Channel Enhancement-Mode Lateral MOSFET designed for GSM and GSM EDGE base station applications operating between 1800 MHz and 2000 MHz. It supports Class AB and Class C operation for cellular modulations. Typical performance at VDD = 28 Volts and IDQ = 1100 mA includes 125 Watts CW output power with 16.5 dB gain and 55% drain efficiency at 1930 MHz. For GSM EDGE, it delivers 57 Watts average power with 17 dB gain and 39% efficiency across the 1930-1990 MHz band.

Feature Summary

• Internally matched input and output networks to simplify circuit design
• Integrated electrostatic discharge (ESD) protection mechanisms
• Characterized using series equivalent large-signal impedance parameters
• Compliant with RoHS environmental standards

Applications

• GSM base station amplifier stages
• GSM EDGE base station amplifier stages
• Cellular radio amplifiers in Class AB or Class C configurations

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging type. The R3 suffix indicates tape and reel packaging containing 250 units per 56 mm reel. Confirm that the component matches the intended thermal and electrical requirements for your specific application before procurement.

Selection Notes

Select this component for wideband cellular applications requiring high linearity and efficiency. Ensure the design accommodates the specified gate-source voltage ranges and thermal management needs. Verify compatibility with digital predistortion systems if utilizing complex modulation schemes within the supported frequency range.

Part Context

This device belongs to the RF Power Field Effect Transistor family from Freescale Semiconductor. It utilizes lateral N-channel technology optimized for base station environments. The part is housed in a Case 465-06 package style, providing robust construction for high-power RF operations.

Replacement Considerations

MRF7S18125BHSR3