MRF7S18125BHSR3

Overview

The MRF7S18125BHSR3 is an N-channel enhancement-mode lateral MOSFET designed for GSM and GSM EDGE base station applications operating between 1800 MHz and 2000 MHz. It supports Class AB and Class C modulation in cellular environments. The device delivers a typical CW output power of 125 Watts at 1930 MHz with a drain efficiency of 55% under 28 Volts. For GSM EDGE, it provides 57 Watts average power with 39% efficiency and 2.6% rms EVM. It features internal matching, integrated ESD protection, and RoHS compliance.

Feature Summary

• Internally matched input and output networks to simplify circuit design
• Integrated electrostatic discharge (ESD) protection mechanisms
• Characterized using series equivalent large-signal impedance parameters

Applications

• GSM base station power amplification
• GSM EDGE base station power amplification
• Class AB cellular base station modulations
• Class C cellular base station modulations

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. Confirm that the component meets current environmental standards such as RoHS compliance. Ensure the supplier provides valid traceability documents. Validate the part number against the manufacturer's latest datasheet revision history to avoid obsolete or discontinued variants.

Selection Notes

Select this component for high-power RF applications requiring internal matching to reduce external passive components. Consider its thermal characteristics and junction temperature limits when designing heat dissipation systems. Evaluate its performance across the specified frequency band to ensure compatibility with target modulation schemes like GSM EDGE.

Part Context

This device belongs to the MRF7S18125BH family of RF power lateral MOSFETs from Freescale Semiconductor, now NXP Semiconductors. These transistors are engineered specifically for demanding wireless infrastructure environments. The SR3 suffix indicates tape and reel packaging configuration.

Replacement Considerations

MRF7S18125BHR3

FAQ

What is the maximum operating voltage for the MRF7S18125BHSR3?

The maximum operating voltage (VDD) is rated at 32 Vdc.

Does the MRF7S18125BHSR3 require external matching networks?

No, the device is internally matched on both the input and output sides for ease of use.

What is the typical Error Vector Magnitude (EVM) for GSM EDGE operation?

The typical EVM is 2.6% rms during GSM EDGE application testing.