MRF7S19120NR1

Overview

The MRF7S19120NR1 is a high-power RF transistor manufactured by Freescale Semiconductor, utilizing the HV7 LDMOS technology. It is housed in a TO-270WBL-4 plastic package designed to match the performance of cavity packages while reducing costs. The device operates at frequencies up to 2 GHz and is engineered for demanding wireless system applications.

Feature Summary

• Utilizes high-voltage seventh-generation (HV7) LDMOS technology for enhanced performance
• Super-molded plastic packaging offers thermal and electrical characteristics comparable to cavity packages
• Designed to reduce amplifier costs in wireless infrastructure while maintaining strict performance standards

Applications

• Wireless base station power amplifiers
• High-frequency RF signal generation
• Telecommunications infrastructure equipment

Procurement Notes

Verify the specific suffix 'NR1' against official datasheets to confirm reel packaging specifications. Ensure compatibility with the TO-270WBL-4 footprint. Confirm RoHS compliance status through current manufacturer documentation before integration into production designs.

Selection Notes

Select this component when cost-effective plastic packaging is required without sacrificing the high-power density typically associated with ceramic cavity packages. The HV7 technology provides a robust solution for systems needing reliable operation near the 2 GHz frequency range.

Part Context

This part belongs to the MRF7S series from Freescale Semiconductor, representing their flagship HV7 LDMOS devices. These transistors are specifically developed to address the need for lower-cost alternatives to traditional cavity-packaged RF power transistors in modern wireless communication systems.