MRF7S19210HSR3

Overview

The MRF7S19210HSR3 is an N-Channel Enhancement-Mode Lateral MOSFET designed for CDMA base station applications operating between 1930 and 1990 MHz. It supports Class AB and Class C modulation formats with a typical single-carrier W-CDMA output of 63 Watts average at 28 Volts drain supply. The device delivers 20 dB power gain and 29% drain efficiency under standard test conditions. It features internal matching, ESD protection, and RoHS compliance.

Feature Summary

• Internally matched input and output networks to simplify circuit design
• Integrated electrostatic discharge (ESD) protection mechanisms
• Extended negative gate-source voltage range optimized for Class C operation
• Designed specifically for digital predistortion error correction systems

Applications

• CDMA base station power amplification
• W-CDMA signal processing in cellular infrastructure
• Class AB linear amplifier stages
• Class C high-efficiency amplifier configurations

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. Confirm that the component meets current environmental standards such as RoHS compliance before integration into final assemblies. Ensure thermal management solutions align with the specified junction-to-case thermal resistance values provided in the datasheet.

Selection Notes

Select this component for designs requiring high linearity and power handling within the 1930 to 1990 MHz frequency band. Consider the internal matching capabilities when minimizing external passive components. Evaluate thermal performance requirements based on the specified case operating temperatures and thermal resistance characteristics for reliable long-term operation.

Part Context

This lateral N-channel RF power MOSFET belongs to the MRF7S series developed by Freescale Semiconductor, now part of NXP Semiconductors. The series targets wireless communication infrastructure, providing robust performance for cellular base stations. The NI-780 package facilitates efficient heat dissipation and mounting in high-power amplifier modules.

Replacement Considerations

Consult official manufacturer substitution lists for verified alternatives. Cross-reference pinouts and electrical parameters carefully to ensure compatibility with existing board layouts and thermal constraints.