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The MRF7S21080HR3 is a lateral N-channel RF power MOSFET designed for cellular base station applications. It operates within the 2110-2170 MHz frequency band, delivering 48 W of average output power at a 28 V supply voltage. The device utilizes an air cavity package to facilitate efficient thermal management and high-power density performance in demanding RF environments.
Verify the complete part number against official manufacturer documentation to ensure correct suffix identification. Confirm that the specific variant matches the required frequency range and power specifications for your design. Cross-reference with current NXP product portfolios as Freescale Semiconductor assets have been integrated into NXP Semiconductors. Ensure compliance with relevant environmental standards before procurement.
Select this component for designs requiring robust performance in the 2110-2170 MHz band. Evaluate thermal requirements based on the 48 W average power output at 28 V. Consider the air cavity packaging for integration into existing base station architectures. Compare electrical characteristics against alternative devices in the MRF7S family to determine optimal fit for specific linearity and efficiency targets.
This device belongs to the MRF7S series of RF power MOSFETs developed by Freescale Semiconductor, now part of NXP. These components are specifically engineered for wireless communication infrastructure. The series offers various power levels and frequency ranges to support different generations of mobile network technologies, providing designers with scalable solutions for base station deployment.