MRF7S21110HSR3

Overview

The MRF7S21110HSR3 is an N-Channel Enhancement-Mode Lateral MOSFET designed for CDMA base station applications operating between 2110 and 2170 MHz. It delivers 33 Watts average output power at 28 Volts with a typical gain of 17.3 dB and drain efficiency of 32.5%. The device supports Class AB and Class C amplifier configurations for PCN-PCS/cellular radio and WLL systems. It features a peak tuned output power capability of 110 Watts CW at 2140 MHz and handles 10:1 VSWR. The component utilizes the NI-780S package.

Feature Summary

• Internally matched input and output networks to simplify circuit design
• Integrated electrostatic discharge (ESD) protection mechanisms
• Extended negative gate-source voltage range optimized for Class C operation
• Engineered compatibility with digital predistortion error correction systems

Applications

• CDMA base station amplifiers
• Multicarrier amplifier applications
• PCN-PCS cellular radio systems
• Wireless Local Loop (WLL) applications

Procurement Notes

Verify the specific ordering suffix 'SR3' against current manufacturer documentation to confirm packaging specifications, as suffixes define reel quantities and tape widths. Confirm RoHS compliance status through official datasheets or certificates of conformity prior to integration. Ensure the component meets all environmental and safety standards required for the intended deployment environment.

Selection Notes

Select this component for designs requiring high linearity in single-carrier W-CDMA environments. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance values. Consider the internal matching characteristics when designing impedance networks. Validate performance parameters under actual operating conditions using the provided series equivalent large-signal impedance data.

Part Context

This lateral N-channel RF power MOSFET belongs to the MRF7S family developed by Freescale Semiconductor, now part of NXP Semiconductors. The device is specifically engineered for wireless communication infrastructure. It represents a solution for high-power density applications in the S-band frequency range, supporting modern multicarrier modulation schemes used in cellular network base stations.

Replacement Considerations

MRF7S21110HR3