MRF7S21170HR3

Overview

The MRF7S21170HR3 is an N-Channel Enhancement-Mode Lateral MOSFET designed for CDMA base station applications operating between 2110 and 2170 MHz. It supports Class AB and Class C amplifier configurations for PCN-PCS/cellular radio and WLL systems. The device delivers a typical single-carrier W-CDMA output of 50 Watts average power at 28 Volts drain supply with 1400 mA quiescent current. It achieves approximately 170 Watts CW output power at the 1 dB compression point and handles 5:1 VSWR at 32 Vdc.

Feature Summary

• Optimized specifically for Doherty amplifier applications to enhance system efficiency.
• Internally matched input and output networks to simplify circuit design and integration.
• Integrated electrostatic discharge (ESD) protection mechanisms for improved robustness.
• Features an extended negative gate-source voltage range to facilitate improved Class C operation.

Applications

• CDMA base station amplifiers
• Multicarrier amplifier applications
• PCN-PCS/cellular radio systems
• Wireless Local Loop (WLL) applications

Procurement Notes

Verify component authenticity through authorized distribution channels, as this part originates from Freescale Semiconductor, now part of NXP Semiconductors. Confirm that the specific suffix matches the required packaging format, such as tape and reel options. Ensure compliance with RoHS standards and check for any product change notifications or obsolescence notices relevant to the manufacturing date code before finalizing procurement decisions.

Selection Notes

Select this component when designing amplifiers for the 2110-2170 MHz frequency band requiring high linearity and power handling. It is suitable for both Class AB and Class C topologies. Designers should account for the internal matching characteristics and utilize the provided series equivalent large-signal impedance parameters for accurate load-pull simulations. Consider thermal management requirements given the junction-to-case thermal resistance specifications under continuous wave conditions.

Part Context

This lateral N-channel RF power MOSFET belongs to the MRF7S series, which includes variants like the MRF7S27130H and MRF7S18170HR3. These devices are engineered for cellular infrastructure, offering high power density and reliability. The MRF7S21170HR3 specifically targets the 2100 MHz band, complementing other models designed for different frequency ranges within the same family of RF transistors.

Replacement Considerations

MRF7S21170HSR3 serves as the primary alternative variant within the same package and electrical specification set. Verify pinout compatibility and thermal characteristics when substituting. No other cross-family replacements are confirmed in official documentation.

FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is 225°C.

Is the device internally matched?

Yes, the MRF7S21170HR3 is internally matched on both the input and output ports.

What is the typical power gain at 50 Watts average output?

The typical power gain is 16 dB under standard test conditions.