MRF7S21170HR5

Overview

The MRF7S21170HR5 is an N-channel enhancement-mode lateral MOSFET designed for CDMA base station applications operating between 2110 and 2170 MHz. It supports Class AB and Class C operation for PCS/cellular radio and WLL applications. The device delivers a typical single-carrier W-CDMA output of 50 Watts average power at 28 Volts drain supply with 1400 mA quiescent current. It achieves 16 dB power gain, 31% drain efficiency, and -37 dBc ACPR at 5 MHz offset. The transistor handles up to 170 Watts CW output power at the 1 dB compression point and withstands 5:1 VSWR at 32 Vdc.

Feature Summary

• Optimized for Doherty amplifier configurations
• Internally matched input and output networks
• Integrated electrostatic discharge protection
• Extended negative gate-source voltage range

Applications

• CDMA base station amplifiers
• Multicarrier amplifier stages
• PCS/cellular radio transmitters
• Wireless Local Loop (WLL) systems

Procurement Notes

Verify the specific suffix against official documentation to confirm packaging details. Confirm that the ordering code matches the required reel specifications and tape width. Ensure compatibility with the intended thermal management solution before procurement.

Selection Notes

Select this component for wideband RF power amplification in cellular infrastructure. Validate performance under actual load conditions as typical parameters vary. Consider thermal resistance characteristics when designing heat sinks for continuous high-power operation.

Part Context

This lateral MOSFET belongs to the MRF7S series from NXP USA Inc., formerly Freescale Semiconductor. It utilizes a flange-mount package suitable for high-power dissipation. The device is characterized using large-signal impedance parameters for accurate circuit simulation.

Replacement Considerations

MRF7S21170HR3

FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is 225 °C.

Is the device internally matched?

Yes, the MRF7S21170HR5 features internal matching on both the input and output ports.

Can this transistor operate in Class C mode?

Yes, it includes a greater negative gate-source voltage range specifically to improve Class C operation.