MRF7S21210HR5

Overview

The MRF7S21210HR5 is an N-Channel Enhancement-Mode Lateral MOSFET designed for CDMA base station applications operating between 2110 and 2170 MHz. It supports Class AB and Class C modulation formats with a drain-source voltage of 65 Vdc and gate-source voltage range from -6.0 to +10 Vdc. The device delivers typical single-carrier W-CDMA performance of 63 Watts average output power at 28 Volts, achieving 18.5 dB gain and 29% efficiency. Peak CW output reaches 190 Watts at 1 dB compression point.

Feature Summary

• Internally matched input and output networks for simplified circuit design
• Integrated electrostatic discharge (ESD) protection mechanisms
• Extended negative gate-source voltage range optimized for Class C operation
• Characterized using series equivalent large-signal impedance parameters

Applications

• CDMA base station amplifiers
• W-CDMA cellular radio systems
• PCS/cellular radio infrastructure
• Digital predistortion error correction systems

Procurement Notes

Verify the specific suffix 'R5' against official documentation, as the datasheet primarily details 'R3' and 'SR3' variants. Confirm current manufacturing status and availability through authorized channels, as component lifecycles may have changed since the original release. Ensure compliance with RoHS standards and verify thermal management requirements for the NI-780S package during integration.

Selection Notes

Select this component for high-power RF applications requiring robust linearity and efficiency in the 2110–2170 MHz band. Consider the internal matching capabilities to reduce external component count. Evaluate thermal resistance characteristics and junction temperature limits for reliable long-term operation under continuous wave or pulsed conditions within specified voltage constraints.

Part Context

This lateral N-channel RF power MOSFET belongs to the MRF7S family developed by Freescale Semiconductor, now part of NXP Semiconductors. Designed specifically for wireless communication infrastructure, it addresses the demands of modern cellular base stations. The device utilizes silicon technology housed in surface-mount packages suitable for automated assembly processes.

Replacement Considerations

Consult official substitution lists for direct replacements. Verify electrical compatibility and pinout alignment before integrating alternative components.