MRF7S27130HR3

Overview

The MRF7S27130HR3 is an N-Channel Enhancement-Mode Lateral MOSFET designed for WiMAX base station applications up to 2700 MHz. It operates at a drain-source voltage of 65 Vdc and supports a maximum junction temperature of 225 °C. The device delivers 23 Watts average output power in the 2500-2700 MHz band with a typical power gain of 16.5 dB and drain efficiency of 20%. It features internal matching, integrated ESD protection, and RoHS compliance.

Feature Summary

• Internally matched input and output networks for simplified circuit design
• Integrated electrostatic discharge (ESD) protection mechanisms
• Extended negative gate-source voltage range optimized for Class C operation

Applications

• WiMAX base station amplifier stages
• WiBro system amplifiers
• BWA broadband wireless access systems
• OFDM multicarrier Class AB and Class C amplifier designs

Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm that the R3 suffix corresponds to the specified tape and reel packaging configuration. Ensure compatibility with existing thermal management infrastructure given the high junction temperature rating. Validate supply chain documentation against current manufacturer records.

Selection Notes

Evaluate thermal resistance characteristics relative to the specific heat sink design. Assess impedance matching requirements despite internal matching provisions. Consider the operating voltage limits and gate threshold specifications for bias network design. Verify package dimensions against the PCB layout constraints.

Part Context

This lateral N-channel RF power MOSFET belongs to the MRF7S series developed by Freescale Semiconductor. It utilizes a NI-780 case style package designed for surface mount applications. The device represents a specialized solution for high-frequency wireless communication infrastructure requiring robust linearity and power handling capabilities.

Replacement Considerations

MRF7S27130HSR3