MRF7S27130HSR5

MRF7S27130HSR5

$106.25
  • Description:RF MOSFET LDMOS 28V NI780
  • Series:-

SKU:c6a00f7e3219 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V NI780
  • Series:-
  • Mfr:Freescale Semiconductor
  • Package:Bulk
  • Technology:LDMOS
  • Frequency:2.7GHz
  • Gain:16.5dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:1.5 A
  • Power - Output:23W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:NI-780S
  • Supplier Device Package:NI-780S
  • Configuration:-

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MRF7S27130HSR5

Overview

The MRF7S27130HSR5 is an RF MOSFET transistor from the HV7 series, manufactured by NXP Semiconductors (formerly Freescale Semiconductor). It is designed for high-power applications in the S-band, specifically operating at a center frequency of 2.7 GHz. The device delivers a continuous wave output power of 130 W with a typical drain efficiency of 78%. Key electrical parameters include a minimum drain-source breakdown voltage of 65 V and a maximum junction temperature rating of 225 °C. The component utilizes a metal-oxide semiconductor technology and operates in enhancement mode.

Feature Summary

  • High power density design optimized for S-band radio frequency amplification
  • Enhanced thermal stability supporting operation up to 225 degrees Celsius junction temperature
  • Robust construction utilizing nickel-plated flange mount package for efficient heat dissipation

Applications

  • Base station power amplifiers
  • Military radar systems
  • Electronic warfare equipment

Procurement Notes

Verify the specific suffix against official NXP documentation to confirm pinout and marking variations. Ensure compatibility with existing thermal management solutions given the high power dissipation requirements. Confirm RoHS compliance status through current datasheets as manufacturing processes may evolve. Validate that the flange mount package dimensions match the intended chassis or heatsink interface specifications before procurement.

Selection Notes

Select this component for designs requiring high linearity and efficiency in the S-band spectrum. Consider the 65 V breakdown voltage when designing bias networks and protection circuits. Evaluate the thermal resistance characteristics to ensure adequate cooling infrastructure is available. Compare performance metrics against alternative devices in the HV7 family if different power levels or frequencies are required.

Part Context

This device belongs to the NXP HV7 series of RF power MOSFETs, which are engineered for demanding wireless communication and defense applications. The series is known for combining high output power with excellent reliability in harsh environments. The MRF7S27130HSR5 represents a specific configuration within this lineup, tailored for 2.7 GHz operations where high efficiency and power handling are critical for system performance.

Replacement Considerations

Consult NXP official substitution guides for direct replacements. Verify pin-to-pin compatibility and thermal characteristics when considering alternatives.

MRF7S27130HSR5MRF7S27130HSR5
$106.25
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