MRF7S38040HSR3

Overview

The MRF7S38040HSR3 is an N-channel RF power field-effect transistor designed for base station applications operating up to 3800 MHz. It delivers 2 W average power and supports WiMAX, WiBro, BWA, and OFDM multicarrier Class applications.

Feature Summary

• Designed for WiMAX base station applications with frequencies up to 3800 MHz
• Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class

Applications

• WiMAX base stations
• WiBro systems
• BWA networks
• OFDM multicarrier Class applications

Procurement Notes

Verify the specific suffix (HR3 vs HSR3) against the manufacturer's official datasheet to confirm lead-free status and RoHS compliance. Ensure the part number matches the exact frequency range and power rating required for your design. Cross-reference with NXP Semiconductors documentation as Freescale assets are now managed by NXP. Confirm package type and pinout compatibility before procurement.

Selection Notes

Select this component for high-frequency RF amplification in wireless infrastructure. It is optimized for multicarrier signals requiring linearity. Consider thermal management due to power dissipation. Verify voltage ratings match system requirements. Evaluate suitability for OFDM modulation schemes. Check availability through authorized NXP distributors.

Part Context

This device belongs to the MRF7S series of lateral N-channel enhancement-mode MOSFETs from Freescale Semiconductor, now part of NXP. These transistors are engineered for radio frequency power amplification in cellular and broadband wireless communication systems. The series offers robust performance in demanding RF environments.

Replacement Considerations

Check NXP official documentation for direct cross-references. No public substitute part numbers are confirmed in available sources.