MRF7S38040HSR5

Overview

The MRF7S38040HSR5 is an N-Channel Enhancement-Mode Lateral MOSFET designed for WiMAX base station applications up to 3800 MHz. It delivers 8 Watts average output power at 30 Volts with a typical drain efficiency of 15.6% and power gain of 14 dB in the 3400-3600 MHz band. The device supports Class AB and Class C amplifier configurations, handles 10:1 VSWR at 32 Vdc, and features a maximum junction temperature of 225 °C.

Feature Summary

• Internally matched input and output networks for simplified circuit integration
• Integrated electrostatic discharge (ESD) protection mechanisms
• Extended negative gate-source voltage range optimized for improved Class C operation

Applications

• WiMAX base station amplifiers
• WiBro systems
• Broadband Wireless Access (BWA)
• OFDM multicarrier Class AB and Class C amplifiers

Procurement Notes

Verify that the specific suffix 'SR5' corresponds to the standard tape and reel packaging described for the 'SR3' variant in official documentation. Confirm RoHS compliance status and ensure the ordering code matches the exact package style required for your thermal management design.

Selection Notes

Select this component for high-frequency broadband applications requiring internal matching. Ensure the bias network accommodates the specified quiescent current and verify that the system can handle the peak-to-average ratio requirements for OFDM signals within the designated frequency range.

Part Context

This lateral N-channel MOSFET belongs to the RF Power Field Effect Transistor family from Freescale Semiconductor. It utilizes a specialized package designed for efficient heat dissipation in base station environments, supporting continuous operation at elevated temperatures while maintaining signal integrity.

Replacement Considerations

Consult official substitution lists for equivalent devices. Verify pinout compatibility and thermal resistance characteristics before replacing existing components in established designs.