MRF8HP21130HSR3

Overview

The MRF8HP21130HSR3 is an RF power field-effect transistor utilizing LDMOS technology. It operates at a test frequency of 2.17GHz with a gain of 14dB. The device requires a test voltage of 28V and a test current of 360mA, delivering an output power of 28W. It is housed in the NI-780S-4 package.

Feature Summary

• Utilizes LDMOS technology for RF power applications
• Dual configuration design
• Operates within S-band frequencies

Applications

• RF power amplification
• Wireless communication systems
• Base station transmitters

Procurement Notes

Verify the specific manufacturer designation, as documentation references both Freescale Semiconductor and NXP. Confirm the exact package variant matches the NI-780S-4 specification. Ensure the component status is active and compatible with required thermal management solutions for the specified power output.

Selection Notes

Select this component for applications requiring 28W output at 2.17GHz. Consider the dual configuration and LDMOS technology benefits. Evaluate thermal requirements for the NI-780S-4 package to ensure reliable operation under the specified 28V and 360mA test conditions.

Part Context

This part belongs to the MRF series of RF MOSFETs designed by Freescale Semiconductor. It is engineered for high-frequency performance, specifically targeting the 2.17GHz range. The NI-780S-4 package provides a standardized form factor for integration into RF circuits requiring moderate power output.

Replacement Considerations

No public confirmed substitute part numbers are available.