MRF8P20140WHR3

Overview

The MRF8P20140WHR3 is an RF MOSFET LDMOS device manufactured by NXP USA Inc. It operates within the frequency range of 1880 to 2025 MHz. The component is designed for CDMA base station applications, delivering 24 W average power output. It functions at a supply voltage of 28 V with a current rating of 500 mA.

Feature Summary

• Designed specifically for CDMA base station applications
• Operates in the 1880 to 2025 MHz frequency band

Applications

• CDMA base station amplification
• RF power amplification in wireless communication systems

Procurement Notes

Verify the specific suffix (R3) against official NXP documentation to confirm tape and reel packaging requirements. Ensure compatibility with existing thermal management solutions for LDMOS devices operating at 28 V. Cross-reference the part number with authorized distributors to avoid counterfeit components. Confirm that the 24 W average power rating aligns with system design constraints.

Selection Notes

Select this component when designing for CDMA infrastructure requiring operation between 1880 and 2025 MHz. Consider the 28 V supply requirement and 500 mA current draw during circuit planning. Evaluate thermal dissipation needs for 24 W average power output. Compare against similar NXP models like MRF8P20140WHSR3 if different packaging options are required.

Part Context

This device belongs to NXP's RF FETs and MOSFets portfolio, specifically LDMOS technology. It is part of a series including variants such as MRF8P20140WHSR3 and MRF8P20140WGHSR3, all targeting similar CDMA base station frequencies. These components are engineered for high reliability in telecommunications infrastructure.

Replacement Considerations

Official substitutes include MRF8P20140WHSR3 and MRF8P20140WGHSR3. Verify package differences and lead specifications before substitution.