MRF8P20160HR3

Overview

The MRF8P20160HR3 is an RF LDMOS transistor designed for CDMA base station applications operating in the 1880 to 2025 MHz frequency range. It delivers 37 W of average output power at 28 V supply voltage. The device supports Class AB and Class C modulation formats typical of cellular base stations.

Feature Summary

• Designed specifically for CDMA base station applications within the 1880-2025 MHz band
• Capable of supporting both Class AB and Class C operational modes
• Provides high average output power suitable for cellular infrastructure

Applications

• CDMA base station transmitters
• Cellular infrastructure amplification
• RF power amplification in wireless communication systems

Procurement Notes

Verify the specific suffix (R3) against the manufacturer's current ordering guide to ensure correct packaging and tape-and-reel specifications. Confirm that the 28V rating aligns with your system design requirements. Check for any recent lifecycle status updates or recommended alternative part numbers from NXP Semiconductors before finalizing procurement decisions.

Selection Notes

Select this component when designing for CDMA frequencies between 1880 and 2025 MHz requiring 37W average power. Ensure thermal management solutions support the power dissipation characteristics. Compare input/output impedance matching requirements against existing circuit designs to verify compatibility with standard 50-ohm systems.

Part Context

This device belongs to NXP's MRF8P series of RF LDMOS transistors optimized for mobile communications. It complements other models like the MRF8P20140WHSR3, offering specific power and frequency characteristics tailored for base station amplification needs in the PCS/IMT bands.

Replacement Considerations

The MRF8P20160HSR3 is a related variant within the same family. Verify if the HS suffix indicates a different package or tape specification while maintaining identical electrical performance for direct substitution in existing designs.