MRF8P20160HSR3

Overview

The MRF8P20160HSR3 is an L-band RF power MOSFET manufactured by Freescale Semiconductor (NXP). It operates at a frequency of 1.92 GHz with a gain of 16.5 dB. The device delivers 37 W of output power and features a drain-source voltage of 28 V. It utilizes the NI-780S-4 package configuration.

Feature Summary

• Dual-element L-band N-channel RF power MOSFET construction
• High gain performance of 16.5 dB at operating frequency
• Enhanced thermal management via metal-sealed ceramic flatpack

Applications

• L-band radar systems
• Military communication transmitters
• Base station amplifiers

Procurement Notes

Verify the manufacturer source, as Rochester Electronics also lists this part number. Confirm the specific package variant matches the NI-780S-4 designation to ensure compatibility with existing board layouts and thermal requirements.

Selection Notes

Select this component for applications requiring high linearity and efficiency in the L-band spectrum. The dual-element design allows for balanced operation, reducing even-order distortion compared to single-ended configurations in push-pull amplifier topologies.

Part Context

This part belongs to the MRF8P series of RF MOSFETs designed for high-power applications. It represents a transition from older silicon technologies to more robust LDMOS structures, offering improved reliability and power density for defense and aerospace communications.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation. Cross-reference with MRF8S or MRF8P series datasheets for potential functional equivalents if direct replacement is required.

FAQ

What is the maximum drain-source voltage?

The maximum drain-source voltage is 28 V.

Is this device a single or dual element?

The MRF8P20160HSR3 is a dual-element RF MOSFET.