MRF8P20161HSR3

Overview

The MRF8P20161HSR3 is an RF power MOSFET designed for LDMOS technology in a dual configuration. It operates at 28 V with a rated voltage of 65 V. Optimized for frequencies around 1.92 GHz, it delivers 37 W average power and provides 16.4 dB gain. The device supports Class AB and Class C operation modes.

Feature Summary

• Dual-element LDMOS structure optimized for high-frequency RF applications
• Capable of supporting both Class AB and Class C operational modes
• Designed for robust performance in cellular base station environments

Applications

• CDMA base station transmitters
• Cellular base station power amplifiers
• L-band RF signal generation

Procurement Notes

Verify the specific datasheet version to confirm pinout compatibility and thermal requirements. Ensure the NI-780S-4L package matches your PCB footprint. Confirm that the 28 V supply rating aligns with your system design constraints before procurement.

Selection Notes

Select this component for applications requiring high linearity and efficiency in the 1.88–1.92 GHz range. Consider the dual configuration for balanced drive requirements. Evaluate thermal management needs due to the 37 W output power capability in surface mount packaging.

Part Context

This part belongs to the MRF8 series of RF power transistors from NXP/Freescale. It utilizes silicon LDMOS technology for high reliability. The NI-780S-4L package facilitates surface mounting for compact base station designs.

Replacement Considerations

Check for direct substitutes within the MRF8 family such as MRF8P20160H. Verify frequency coverage and power output specifications match exactly. Ensure package dimensions and pin assignments are compatible with existing layouts.