MRF8P23080HR5

Overview

The MRF8P23080HR5 is an RF MOSFET utilizing LDMS technology, designed for base station applications. It operates at a test voltage of 28 V and a current of 280 mA. The device supports frequencies up to 2.3 GHz with a gain of 14.6 dB and delivers 16 W of output power. It features a rated voltage of 65 V and uses a chassis mount configuration in the NI-780-4 package.

Feature Summary

• Dual-channel RF MOSFET structure for balanced signal processing
• LDMS technology optimized for high-frequency cellular modulation formats
• Chassis mount design ensuring robust thermal management in base stations

Applications

• W-CDMA base station transmitters
• LTE base station transmitters
• Cellular infrastructure amplification

Procurement Notes

Verify component authenticity through authorized NXP channels. Confirm RoHS compliance status and check for end-of-life notices. Ensure packaging integrity matches NI-780-4 specifications. Validate datasheet revisions against current engineering requirements before integration into production lines.

Selection Notes

Select this component for applications requiring 16 W output at 2.3 GHz. Ensure system design accommodates 28 V operating conditions. Verify chassis mounting capabilities align with enclosure thermal profiles. Consider dual-channel configuration benefits for balanced load distribution in amplifier stages.

Part Context

Part of the MRF8 series from NXP, targeting wireless communication infrastructure. Designed specifically for modern cellular standards including LTE and W-CDMA. Offers high efficiency and linearity for base station power amplification needs.

Replacement Considerations

Consult official NXP documentation for direct substitutes. Evaluate pin compatibility and thermal resistance when considering alternatives. Verify frequency range and power output match application requirements.