MRF8P23080HSR3

$61.72

Description：RF MOSFET LDMOS 28V NI780
Series：-

SKU:0b404fa2dfca Category: RF FETs, MOSFETs Brand: Freescale Semiconductor

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Product introduction

Product Detailed Parameters

Description：RF MOSFET LDMOS 28V NI780
Series：-
Mfr：Freescale Semiconductor
Package：Bulk
Technology：LDMOS
Frequency：2.3GHz
Gain：14.6dB
Voltage - Test：28 V
Current Rating (Amps)：-
Noise Figure：-
Current - Test：280 mA
Power - Output：16W
Voltage - Rated：65 V
Grade：-
Qualification：-
Mounting Type：Surface Mount
Package / Case：NI-780S-4L
Supplier Device Package：NI-780S-4L
Configuration：Dual

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MRF8P23080HSR3

Overview

The MRF8P23080HSR3 is an RF power MOSFET designed for W-CDMA and LTE base station applications within the 2300 to 2620 MHz frequency range. It delivers 80 W of average output power with a gain of 14.6 dB at 2.3 GHz. The device operates in Class AB and Class C modes, featuring a minimum drain-source breakdown voltage of 65 V and a test current of 280 mA. Packaged in the NI-780S-4 surface-mount format, it utilizes silicon N-channel enhancement mode technology suitable for high-frequency radio frequency power amplification.

Feature Summary

Designed for W-CDMA and LTE base station applications
Operates in Class AB and Class C modes
Utilizes silicon N-channel enhancement mode technology

Applications

W-CDMA base station power amplification
LTE base station power amplification
High-frequency RF power amplification

Procurement Notes

Verify the specific datasheet version from NXP Semiconductors or Freescale archives to confirm compliance with European Union member state regulations. Ensure the component matches the NI-780S-4 package specification and validates against the stated electrical parameters for the 2300–2620 MHz band before integration into base station designs.

Selection Notes

Select this component for base station architectures requiring 80 W average output power in the 2.3 GHz range. Consider the 14.6 dB gain and 65 V breakdown voltage when designing matching networks. Evaluate thermal management requirements for the NI-780S-4 surface-mount package to ensure reliable operation in Class AB or Class C configurations.

Part Context

This part belongs to the MRF8 series of RF power MOSFETs developed by Freescale Semiconductor, now part of NXP Semiconductors. The series targets cellular infrastructure markets, specifically supporting wideband code division multiple access and long-term evolution standards. The MRF8P23080HSR3 represents a specialized variant optimized for the 2300–2620 MHz spectrum.